Charles Hsu, President of PUFsecurity
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In my previous article, I have briefly introduced the physics of the quantum tunneling behavior in NeoPUF. In this article, I will explain, in detail, the quantum-tunneling mechanism in the gate oxide of MOSFET in advanced silicon processes and how it applies in the creation of NeoPUF characteristics.
I will use a two-dimensional cross section of a silicon dioxide atomic structure and a corresponding energy band diagram to explain trap-assisted electron tunneling…
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